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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 DPAK, TO-220FP, TO-220, IPAK , second generation MDmeshTM Power MOSFET Features VDSS @ RDS(on) Order codes ID TJmax max. 3 2 3 1 2 STD7NM60N 1 STF7NM60N IPAK TO-220 650 V < 0.9 5A STP7NM60N STU7NM60N 3 100% avalanche tested 1 3 2 Low input capacitance and gate charge DPAK 1 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes Marking Package Packaging STD7NM60N DPAK Tape and reel STF7NM60N TO-220FP Tube 7NM60N STP7NM60N TO-220 Tube STU7NM60N IPAK Tube October 2010 Doc ID 16472 Rev 3 1/17 www.st.com 17 Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Contents 1